Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 24 vom: 15. Juni, Seite e2312008
1. Verfasser: Shi, Jiacheng (VerfasserIn)
Weitere Verfasser: Arpaci, Sevdenur, Lopez-Dominguez, Victor, Sangwan, Vinod K, Mahfouzi, Farzad, Kim, Jinwoong, Athas, Jordan G, Hamdi, Mohammad, Aygen, Can, Arava, Hanu, Phatak, Charudatta, Carpentieri, Mario, Jiang, Jidong S, Grayson, Matthew A, Kioussis, Nicholas, Finocchio, Giovanni, Hersam, Mark C, Khalili Amiri, Pedram
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article antiferromagnets magnetic random‐access memory magnetic tunnel junctions spin–orbit torques tunneling magnetoresistance
Beschreibung
Zusammenfassung:© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes
Beschreibung:Date Revised 13.06.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202312008