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240114s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202307951
|2 doi
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|a pubmed24n1373.xml
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|a eng
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| 100 |
1 |
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|a Li, Xiao-Dong
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Resistive Memory Devices at the Thinnest Limit
|b Progress and Challenges
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|c 2024
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 11.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The Si-based integrated circuits industry has been developing for more than half a century, by focusing on the scaling-down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in-memory computing and energy-efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle-to-cycle and device-to-device uniformities hinder its mass production. 2D materials, as a new type of semiconductor, is successfully employed in various micro/nanoelectronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high-frequency device performances, and in-memory computing/neuromorphic computing applications. The scaling-down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides, and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer-2D-material-based resistive memory is expected to play a positive role in the exploration of beyond-Si electronic technologies
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|a Journal Article
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|a Review
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|a 2D monolayer materials
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| 650 |
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|a atomristor, memristor
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| 650 |
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|a memtransistor
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| 650 |
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|a nonvolatile memory
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| 700 |
1 |
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|a Chen, Nian-Ke
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Bai-Qian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Niu, Meng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Miao, Xiangshui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xian-Bin
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 15 vom: 10. Apr., Seite e2307951
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|g volume:36
|g year:2024
|g number:15
|g day:10
|g month:04
|g pages:e2307951
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|u http://dx.doi.org/10.1002/adma.202307951
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