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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202306850
|2 doi
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|a pubmed24n1234.xml
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|a (DE-627)NLM361860226
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|a (NLM)37688530
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Yin, Lei
|e verfasserin
|4 aut
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|a Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.12.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The ultrathin thickness of 2D layered materials affords the control of their properties through defects, surface modification, and electrostatic fields more efficiently compared with bulk architecture. In particular, patterning design, such as moiré superlattice patterns and spatially periodic dielectric structures, are demonstrated to possess the ability to precisely control the local atomic and electronic environment at large scale, thus providing extra degrees of freedom to realize tailored material properties and device functionality. Here, the scalable atomic-scale patterning in superionic cuprous telluride by using the bonding difference at nonequivalent copper sites is reported. Moreover, benefitting from the natural coupling of ordered and disordered sublattices, controllable piezoelectricity-like multilevel switching and bipolar switching with the designed crystal structure and electrical contact is realized, and their application in image enhancement is demonstrated. This work extends the known classes of patternable crystals and atomic switching devices, and ushers in a frontier for image processing with memristors
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|a Journal Article
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|a 2D crystals
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|a atomic-scale patterning
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|a cuprous telluride
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|a image processing
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|a resistive switching
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|a Cheng, Ruiqing
|e verfasserin
|4 aut
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|a Pan, Shurong
|e verfasserin
|4 aut
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|a Xiong, Wenqi
|e verfasserin
|4 aut
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|a Chang, Sheng
|e verfasserin
|4 aut
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|a Zhai, Baoxing
|e verfasserin
|4 aut
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| 700 |
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|a Wen, Yao
|e verfasserin
|4 aut
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| 700 |
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|a Cai, Yuchen
|e verfasserin
|4 aut
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|a Guo, Yuzheng
|e verfasserin
|4 aut
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| 700 |
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|a Sendeku, Marshet Getaye
|e verfasserin
|4 aut
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| 700 |
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|a Jiang, Jian
|e verfasserin
|4 aut
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| 700 |
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|a Liao, Weitu
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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| 700 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 51 vom: 09. Dez., Seite e2306850
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:51
|g day:09
|g month:12
|g pages:e2306850
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|u http://dx.doi.org/10.1002/adma.202306850
|3 Volltext
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