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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.3c00714
|2 doi
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|a pubmed24n1190.xml
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|a (DE-627)NLM357116755
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|a (NLM)37209170
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Hanzawa, Masaki
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants
|b An Insight into Their Adsorbed Structure
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 06.06.2023
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|a Date Revised 10.06.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Photoresist stripping is the final step in the photolithography process that forms fine patterns for electronic devices. Recently, a mixture of ethylene carbonate (EC) and propylene carbonate (PC) has attracted attention as a new stripper based on its eco-friendliness and anti-corrosiveness. However, the EC/PC mixture causes re-adsorption of the photoresist during a process of subsequent water rinsing. In this study, we characterized the adsorption/desorption of the photoresist and a triblock Pluronic surfactant [poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide)] as a blocking agent on an indium tin oxide (ITO) substrate. In addition, we evaluated the dispersion of photoresist particles. The photoresist polymer formed a thin and rigid adsorption layer on an ITO substrate in the EC/PC mixture. When water was injected into the EC/PC mixture and the photoresist solutions, the photoresist polymer aggregated and was then deposited on the substrate. In contrast, the addition of Pluronic surfactant F-68 (PEO79PPO30PEO79) into the EC/PC mixture remarkably decreased the residual amount of the photoresist on the ITO after water injection. This variation was attributed to the PEO blocks of F-68 extended to the solution phase, whereas the PPO blocks of F-68 functioned as anchors for adsorption onto the photoresist. Therefore, the F-68-adsorbed layer prevented interaction between the photoresist particles or the photoresist and the ITO surface, which provides potential for future applications as new stripping agents with high removal performance
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|a Journal Article
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1 |
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|a Ogura, Taku
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tsuchiya, Koji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Akamatsu, Masaaki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sakai, Kenichi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sakai, Hideki
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 39(2023), 22 vom: 06. Juni, Seite 7876-7883
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
8 |
|g volume:39
|g year:2023
|g number:22
|g day:06
|g month:06
|g pages:7876-7883
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| 856 |
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|u http://dx.doi.org/10.1021/acs.langmuir.3c00714
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_22
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|a GBV_ILN_350
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|a GBV_ILN_721
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|a AR
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|d 39
|j 2023
|e 22
|b 06
|c 06
|h 7876-7883
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