Giant Spin-Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott-Insulator Region

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 28 vom: 25. Juli, Seite e2300110
Auteur principal: Endo, Tatsuro (Auteur)
Autres auteurs: Tsuruoka, Shun, Tadano, Yuriko, Kaneta-Takada, Shingo, Seki, Yuichi, Kobayashi, Masaki, Anh, Le Duc, Seki, Munetoshi, Tabata, Hitoshi, Tanaka, Masaaki, Ohya, Shinobu
Format: Article en ligne
Langue:English
Publié: 2023
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article metal-insulator transition molecular beam epitaxy oxide electronics perovskite manganite spin-valve devices spintronics Oxides