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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202210735
|2 doi
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|a pubmed24n1172.xml
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|a (DE-627)NLM351633839
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|a (NLM)36652589
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wu, Yonghuang
|e verfasserin
|4 aut
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|a All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS2 Field-Effect Transistors
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 07.05.2023
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|a Date Revised 07.05.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect-free interfaces are of vital importance for building nanoscale harsh-environment-resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode-channel interfaces. Here, harsh-environment-resistant MoS2 transistors are developed by engineering electrode-channel interfaces with an all-transfer of van der Waals electrodes. The delivered defect-free, graphene-buffered electrodes keep the electrode-channel interfaces intact and robust. As a result, the as-fabricated MoS2 devices have reduced Schottky barrier heights, leading to a very large on-state current and high carrier mobility. More importantly, the defect-free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS2 and the intercalation of water molecules at the electrode-MoS2 interfaces. This enables high resistances of MoS2 devices with all-transfer electrodes to various harsh environments, including humid, oxidizing, and high-temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode-channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh-environment-resistant devices
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|a Journal Article
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|a field-effect transistors
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|a harsh-environment resistance
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|a interface engineering
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|a molybdenum disulfide
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4 |
|a van der Waals electrodes
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1 |
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|a Xin, Zeqin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zhibin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Bolun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Ruixuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Enze
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Run
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yiqun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Jing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kaihui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kai
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 18 vom: 31. Mai, Seite e2210735
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:18
|g day:31
|g month:05
|g pages:e2210735
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|u http://dx.doi.org/10.1002/adma.202210735
|3 Volltext
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