All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS2 Field-Effect Transistors
© 2023 Wiley-VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 18 vom: 31. Mai, Seite e2210735 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2023
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article field-effect transistors harsh-environment resistance interface engineering molybdenum disulfide van der Waals electrodes |
| Zusammenfassung: | © 2023 Wiley-VCH GmbH. Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect-free interfaces are of vital importance for building nanoscale harsh-environment-resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode-channel interfaces. Here, harsh-environment-resistant MoS2 transistors are developed by engineering electrode-channel interfaces with an all-transfer of van der Waals electrodes. The delivered defect-free, graphene-buffered electrodes keep the electrode-channel interfaces intact and robust. As a result, the as-fabricated MoS2 devices have reduced Schottky barrier heights, leading to a very large on-state current and high carrier mobility. More importantly, the defect-free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS2 and the intercalation of water molecules at the electrode-MoS2 interfaces. This enables high resistances of MoS2 devices with all-transfer electrodes to various harsh environments, including humid, oxidizing, and high-temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode-channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh-environment-resistant devices |
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| Beschreibung: | Date Completed 07.05.2023 Date Revised 07.05.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202210735 |