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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202208664
|2 doi
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|a pubmed25n1165.xml
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|a (DE-627)NLM349662274
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|a (NLM)36453570
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Lai, Haojie
|e verfasserin
|4 aut
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|a Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2 /2D-Perovskite Van der Waals Heterojunction
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.02.2023
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|a Date Revised 10.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS2 /2D Ruddlesden-Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS2 into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS2 /2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength
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|a Journal Article
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|a 2D perovskite
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|a broadband optoelectronic memory
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|a charge-trapping memory
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|a van der Waals heterostructure
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|a Lu, Zhengli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lu, Yueheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Xuanchun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Xin
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Jian
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Yang
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Pengyi
|e verfasserin
|4 aut
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| 700 |
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|a Shi, Tingting
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Xiaomu
|e verfasserin
|4 aut
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| 700 |
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|a Xie, Weiguang
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 6 vom: 01. Feb., Seite e2208664
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:6
|g day:01
|g month:02
|g pages:e2208664
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|u http://dx.doi.org/10.1002/adma.202208664
|3 Volltext
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