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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202200074
|2 doi
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|a pubmed24n1142.xml
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|a (DE-627)NLM342861093
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|a (NLM)35765199
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Yoo, Byung Il
|e verfasserin
|4 aut
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|a Identifying the Correlation between Structural Parameters and Anisotropic Magnetic Properties in IMnV Semiconductors
|b A Possible Room-Temperature Magnetism
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 18.08.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Layer-structured materials are of central importance in a wide range of research fields owing to their unique properties originating from their two dimensionality and anisotropy. Herein, quasi-2D layer-structured IMnV (I: alkali metals and V: pnictogen elements) compounds are investigated, which are potential antiferromagnetic (AFM) semiconductors. Single crystals of IMnV compounds are successfully grown using the self-flux method and their electronic and magnetic properties are analyzed in correlation with structural parameters. Combined with theoretical calculations, the structural analysis indicates that the variation in the bonding angle between VMnV is responsible for the change in the orbital hybridization of Mn and V, predominantly affecting their anisotropic semiconducting properties. Anisotropy in the magnetic properties is also found, where AFM ordering is expected to occur in the in-plane direction, as supported by spin-structure calculations. Furthermore, a possible ferromagnetic (FM) transition is discussed in relation to the vacancy defects. This study provides a candidate material group for AFM and FM spintronics and a basis for exploring magnetic semiconductors in quasi-2D layer-structured systems
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|a Journal Article
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|a antiferromagnets
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|a defect-induced ferromagnetism
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|a layered structures
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|a magnetic anisotropy
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|a magnetic semiconductors
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|a Lee, Nahyun
|e verfasserin
|4 aut
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1 |
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|a Lamichhane, Bipin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bang, Joonho
|e verfasserin
|4 aut
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1 |
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|a Song, Hyun Yong
|e verfasserin
|4 aut
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|a Park, Byung Cheol
|e verfasserin
|4 aut
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|a Lee, Kyu Hyoung
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Seong-Gon
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Sung Wng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 33 vom: 11. Aug., Seite e2200074
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:33
|g day:11
|g month:08
|g pages:e2200074
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|u http://dx.doi.org/10.1002/adma.202200074
|3 Volltext
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