Identifying the Correlation between Structural Parameters and Anisotropic Magnetic Properties in IMnV Semiconductors A Possible Room-Temperature Magnetism

Identifying the Correlation between Structural Parameters and Anisotropic Magnetic Properties in IMnV Semiconductors : A Possible Room-Temperature Magnetism

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 33 vom: 11. Aug., Seite e2200074
1. Verfasser: Yoo, Byung Il (VerfasserIn)
Weitere Verfasser: Lee, Nahyun, Lamichhane, Bipin, Bang, Joonho, Song, Hyun Yong, Park, Byung Cheol, Lee, Kyu Hyoung, Kim, Seong-Gon, Kim, Sung Wng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article antiferromagnets defect-induced ferromagnetism layered structures magnetic anisotropy magnetic semiconductors
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
Layer-structured materials are of central importance in a wide range of research fields owing to their unique properties originating from their two dimensionality and anisotropy. Herein, quasi-2D layer-structured IMnV (I: alkali metals and V: pnictogen elements) compounds are investigated, which are potential antiferromagnetic (AFM) semiconductors. Single crystals of IMnV compounds are successfully grown using the self-flux method and their electronic and magnetic properties are analyzed in correlation with structural parameters. Combined with theoretical calculations, the structural analysis indicates that the variation in the bonding angle between VMnV is responsible for the change in the orbital hybridization of Mn and V, predominantly affecting their anisotropic semiconducting properties. Anisotropy in the magnetic properties is also found, where AFM ordering is expected to occur in the in-plane direction, as supported by spin-structure calculations. Furthermore, a possible ferromagnetic (FM) transition is discussed in relation to the vacancy defects. This study provides a candidate material group for AFM and FM spintronics and a basis for exploring magnetic semiconductors in quasi-2D layer-structured systems
Beschreibung:Date Revised 18.08.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202200074