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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2022.3179699
|2 doi
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|a pubmed25n1138.xml
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|a (DE-627)NLM34175420X
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|a (NLM)35653448
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wu, Jinbo
|e verfasserin
|4 aut
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|a Exploring Low-Loss Surface Acoustic Wave Devices on Heterogeneous Substrates
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 02.08.2022
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|a Date Revised 06.09.2022
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a This article presents shear horizontal surface acoustic wave (SH-SAW) devices with excellent temperature stability and low loss on ultrathin Y42-cut lithium tantalate film on sapphire substrate (LiTaO3-on-sapphire, LTOS). The demonstrated resonators exhibit scalable resonances from 1.76 to 3.17 GHz, effective electromechanical coupling coefficients between 5.1% and 7.6%, and quality factors (Bode-Q) between 419 and 3019. The filter with a center frequency of 3.26 GHz features a suppressed spurious passband, a 3-dB fractional bandwidth (FBW) of 3%, and a minimum insertion loss (IL) of 2.39 dB. In addition, coplanar waveguides (CPWs) and SH-SAW resonators built on LTOS and LiTaO3-on-insulator (LTOI) substrates were compared over a temperature range of 25 °C-150 °C. Due to the extremely high resistivity of the sapphire and the excellent thermal stability of the LiTaO3/sapphire interface, the IL of the CPW and the impedance ratio (in addition to Bode-Q) of the SH-SAW on the LTOS are maintained well even at 150 °C, while those on the LTOI seriously deteriorate. Of these, the impedance attenuation of LTOS-SAW at the antiresonant frequency is only 3.7 dB at 150 °C, whereas that of LTOI-SAW reaches 9.6 dB, demonstrating excellent temperature stability of the LTOS substrate's radio frequency (RF) performance. Overall, the SAW devices on LTOS substrates show great potential for temperature-sensitive and low-loss applications in RF wireless communications
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Aluminum Oxide
|2 NLM
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|a LMI26O6933
|2 NLM
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| 700 |
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|a Zhang, Shibin
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Liping
|e verfasserin
|4 aut
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|a Zhou, Hongyan
|e verfasserin
|4 aut
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|a Zheng, Pengcheng
|e verfasserin
|4 aut
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|a Yao, Hulin
|e verfasserin
|4 aut
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| 700 |
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|a Li, Zhongxu
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Kai
|e verfasserin
|4 aut
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|a Wu, Tao
|e verfasserin
|4 aut
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| 700 |
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|a Ou, Xin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 69(2022), 8 vom: 02. Aug., Seite 2579-2584
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnas
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| 773 |
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|g volume:69
|g year:2022
|g number:8
|g day:02
|g month:08
|g pages:2579-2584
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|u http://dx.doi.org/10.1109/TUFFC.2022.3179699
|3 Volltext
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|d 69
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|h 2579-2584
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