Exploring Low-Loss Surface Acoustic Wave Devices on Heterogeneous Substrates
This article presents shear horizontal surface acoustic wave (SH-SAW) devices with excellent temperature stability and low loss on ultrathin Y42-cut lithium tantalate film on sapphire substrate (LiTaO3-on-sapphire, LTOS). The demonstrated resonators exhibit scalable resonances from 1.76 to 3.17 GHz,...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 69(2022), 8 vom: 02. Aug., Seite 2579-2584 |
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| Weitere Verfasser: | , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2022
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Aluminum Oxide LMI26O6933 |
| Zusammenfassung: | This article presents shear horizontal surface acoustic wave (SH-SAW) devices with excellent temperature stability and low loss on ultrathin Y42-cut lithium tantalate film on sapphire substrate (LiTaO3-on-sapphire, LTOS). The demonstrated resonators exhibit scalable resonances from 1.76 to 3.17 GHz, effective electromechanical coupling coefficients between 5.1% and 7.6%, and quality factors (Bode-Q) between 419 and 3019. The filter with a center frequency of 3.26 GHz features a suppressed spurious passband, a 3-dB fractional bandwidth (FBW) of 3%, and a minimum insertion loss (IL) of 2.39 dB. In addition, coplanar waveguides (CPWs) and SH-SAW resonators built on LTOS and LiTaO3-on-insulator (LTOI) substrates were compared over a temperature range of 25 °C-150 °C. Due to the extremely high resistivity of the sapphire and the excellent thermal stability of the LiTaO3/sapphire interface, the IL of the CPW and the impedance ratio (in addition to Bode-Q) of the SH-SAW on the LTOS are maintained well even at 150 °C, while those on the LTOI seriously deteriorate. Of these, the impedance attenuation of LTOS-SAW at the antiresonant frequency is only 3.7 dB at 150 °C, whereas that of LTOI-SAW reaches 9.6 dB, demonstrating excellent temperature stability of the LTOS substrate's radio frequency (RF) performance. Overall, the SAW devices on LTOS substrates show great potential for temperature-sensitive and low-loss applications in RF wireless communications |
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| Beschreibung: | Date Completed 02.08.2022 Date Revised 06.09.2022 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2022.3179699 |