Theoretical investigations on the defect structures and g factors for V4+ in 30PbO-5Bi2 O3 -(65-x)SiO2 glasses at different concentrations

© 2022 John Wiley & Sons, Ltd.

Bibliographische Detailangaben
Veröffentlicht in:Magnetic resonance in chemistry : MRC. - 1985. - 60(2022), 8 vom: 02. Aug., Seite 836-844
1. Verfasser: Hu, Jian-Guo (VerfasserIn)
Weitere Verfasser: Wu, Shao-Yi, Yan, Li, Wei, Zhang-Ting, Yang, Yi, Wu, Hao, Zhu, Qin-Sheng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Magnetic resonance in chemistry : MRC
Schlagworte:Journal Article Research Support, Non-U.S. Gov't 30PbO-5Bi2O3-(65-x) SiO2 (PBS) glasses V4 + defect structures electron paramagnetic resonance (EPR) Silicon Dioxide 7631-86-9
Beschreibung
Zusammenfassung:© 2022 John Wiley & Sons, Ltd.
For 3d1 (V4+ ) impurity in 30PbO-5Bi2 O3 -(65-x)SiO2 glass systems with different concentrations x of V2O5, the defect structures and gyromagnetic factors are theoretically investigated by using the perturbation formulas of g factors for a tetragonally compressed octahedral 3d1 group. The concentration dependences of d-d transition band and g factors are suitably explained from the Fourier type concentration functions of the cubic crystal field parameter Dq, covalency factor N and relative tetragonal compression ratio ρ. The above concentration dependences of these quantities are suitably illustrated by the modifications of the local crystal field strength and electron cloud distribution with increasing x. The concentration variations of the electrical conductivity and dielectric relaxation are further analyzed from the stability of the systems in view of two competitive factors (increasing network polymerization and bulk stability at low concentrations and decreasing former SiO2 and stability at high concentrations)
Beschreibung:Date Completed 06.07.2022
Date Revised 07.07.2022
published: Print-Electronic
Citation Status MEDLINE
ISSN:1097-458X
DOI:10.1002/mrc.5270