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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202109445
|2 doi
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|a pubmed25n1119.xml
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|a (DE-627)NLM335965199
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|a (NLM)35061928
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Han, Bin
|e verfasserin
|4 aut
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|a Asymmetric Chemical Functionalization of Top-Contact Electrodes
|b Tuning the Charge Injection for High-Performance MoS2 Field-Effect Transistors and Schottky Diodes
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a The fabrication of high-performance (opto-)electronic devices based on 2D channel materials requires the optimization of the charge injection at electrode-semiconductor interfaces. While chemical functionalization with chemisorbed self-assembled monolayers has been extensively exploited to adjust the work function of metallic electrodes in bottom-contact devices, such a strategy has not been demonstrated for the top-contact configuration, despite the latter being known to offer enhanced charge-injection characteristics. Here, a novel contact engineering method is developed to functionalize gold electrodes in top-contact field-effect transistors (FETs) via the transfer of chemically pre-modified electrodes. The source and drain Au electrodes of the molybdenum disulfide (MoS2 ) FETs are functionalized with thiolated molecules possessing different dipole moments. While the modification of the electrodes with electron-donating molecules yields a marked improvement of device performance, the asymmetric functionalization of the source and drain electrodes with different molecules with opposed dipole moment enables the fabrication of a high-performance Schottky diode with a rectification ratio of ≈103 . This unprecedented strategy to tune the charge injection in top-contact MoS2 FETs is of general applicability for the fabrication of high-performance (opto-)electronic devices, in which asymmetric charge injection is required, enabling tailoring of the device characteristics on demand
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|a Journal Article
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|a Schottky barrier
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| 650 |
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4 |
|a charge injection
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| 650 |
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4 |
|a rectification
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| 650 |
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4 |
|a self-assembled monolayer
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| 650 |
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4 |
|a top-contact bottom-gate
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| 700 |
1 |
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|a Zhao, Yuda
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Chun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Can
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tian, Xinzi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Ye
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Wenping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Samorì, Paolo
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 12 vom: 14. März, Seite e2109445
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:12
|g day:14
|g month:03
|g pages:e2109445
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202109445
|3 Volltext
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