Asymmetric Chemical Functionalization of Top-Contact Electrodes Tuning the Charge Injection for High-Performance MoS2 Field-Effect Transistors and Schottky Diodes

Asymmetric Chemical Functionalization of Top-Contact Electrodes : Tuning the Charge Injection for High-Performance MoS2 Field-Effect Transistors and Schottky Diodes

© 2022 Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 12 vom: 14. März, Seite e2109445
Auteur principal: Han, Bin (Auteur)
Autres auteurs: Zhao, Yuda, Ma, Chun, Wang, Can, Tian, Xinzi, Wang, Ye, Hu, Wenping, Samorì, Paolo
Format: Article en ligne
Langue:English
Publié: 2022
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Schottky barrier charge injection rectification self-assembled monolayer top-contact bottom-gate
Description
Résumé:© 2022 Wiley-VCH GmbH.
The fabrication of high-performance (opto-)electronic devices based on 2D channel materials requires the optimization of the charge injection at electrode-semiconductor interfaces. While chemical functionalization with chemisorbed self-assembled monolayers has been extensively exploited to adjust the work function of metallic electrodes in bottom-contact devices, such a strategy has not been demonstrated for the top-contact configuration, despite the latter being known to offer enhanced charge-injection characteristics. Here, a novel contact engineering method is developed to functionalize gold electrodes in top-contact field-effect transistors (FETs) via the transfer of chemically pre-modified electrodes. The source and drain Au electrodes of the molybdenum disulfide (MoS2 ) FETs are functionalized with thiolated molecules possessing different dipole moments. While the modification of the electrodes with electron-donating molecules yields a marked improvement of device performance, the asymmetric functionalization of the source and drain electrodes with different molecules with opposed dipole moment enables the fabrication of a high-performance Schottky diode with a rectification ratio of ≈103 . This unprecedented strategy to tune the charge injection in top-contact MoS2 FETs is of general applicability for the fabrication of high-performance (opto-)electronic devices, in which asymmetric charge injection is required, enabling tailoring of the device characteristics on demand
Description:Date Revised 24.03.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202109445