In-Memory Realization of Eligibility Traces Based on Conductance Drift of Phase Change Memory for Energy-Efficient Reinforcement Learning

In-Memory Realization of Eligibility Traces Based on Conductance Drift of Phase Change Memory for Energy-Efficient Reinforcement Learning

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Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 6 vom: 04. Feb., Seite e2107811
Auteur principal: Lu, Yingming (Auteur)
Autres auteurs: Li, Xi, Yan, Bonan, Yan, Longhao, Zhang, Teng, Song, Zhitang, Huang, Ru, Yang, Yuchao
Format: Article en ligne
Langue:English
Publié: 2022
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article conductance drift eligibility trace phase change memory reinforcement learning
Accès en ligne Volltext