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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202101633
|2 doi
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|a pubmed25n1100.xml
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|a eng
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|a Wang, Shuya
|e verfasserin
|4 aut
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|a Suppressing Interface Strain for Eliminating Double-Slope Behaviors
|b Towards Ideal Conformable Polymer Field-Effect Transistors
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.11.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a High-mobility polymer field-effect transistors (PFETs) are being actively explored for applications in soft electronic skin and low-cost flexible displays because of their superior solution processability, mechanical flexibility, and stretchability. However, most of high-mobility PFETs often deviate from the idealized behavior with variable mobility, large threshold voltage, and high off-state current, which masks their intrinsic properties and significantly impedes their practical applications. Here, it is first revealed that interface strain between polymer thin film and rigid substrate plays a crucial role in determining the ideality of PFETs, and demonstrate that various ideal conformable PFETs can be successfully fabricated by releasing strain. It is found that strain in film can be released by one-step peeling strategy, which can reduce π-π stacking distance and suppress generation of oxygen doped carriers, thereby obtaining linearly injected charge carriers and decreased carrier concentration in channel, eventually realizing ideal PFETs. More impressively, the fabricated ideal conformable PFET array displays outstanding conformability to curved objects, and meanwhile showing excellent organic light-emitting display driving capability. The work clarifies the effect of the interface strain on the device ideality, and strain can be effectively released by a facile peeling strategy, thus offering useful guidance for the construction of ideal conformable PFETs
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|a Journal Article
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|a conformable transistors
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|a double-slope behaviors
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|a idealized behaviors
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|a polymer field-effect transistors
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|a strains
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|a Zhao, Xiaoli
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Cong
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Yahan
|e verfasserin
|4 aut
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| 700 |
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|a Liang, Jing
|e verfasserin
|4 aut
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| 700 |
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|a Ni, Yanping
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Mingxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Juntong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ye, Xiaolin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jidong
|e verfasserin
|4 aut
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| 700 |
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|a Tong, Yanhong
|e verfasserin
|4 aut
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| 700 |
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|a Tang, Qingxin
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Yichun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 44 vom: 01. Nov., Seite e2101633
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:33
|g year:2021
|g number:44
|g day:01
|g month:11
|g pages:e2101633
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|u http://dx.doi.org/10.1002/adma.202101633
|3 Volltext
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