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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202008586
|2 doi
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|a pubmed24n1090.xml
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|a (DE-627)NLM327203528
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|a (NLM)34173269
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhuo, Weizhuang
|e verfasserin
|4 aut
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| 245 |
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|a Manipulating Ferromagnetism in Few-Layered Cr2 Ge2 Te6
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 05.08.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field-effect transistors with solid ion conductors as the gate dielectric (SIC-FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy-axis switching in few-layered Cr2 Ge2 Te6 . The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out-of-plane direction to an in-plane direction by electric field in the few-layered Cr2 Ge2 Te6 . Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few-layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC-FET device configuration, making further heterostructure-engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device
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|a Journal Article
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|a Cr2Ge2Te6
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|a electrical control of ferromagnetism
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|a field-effect transistors with solid ion conductor
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| 650 |
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|a heterostuctures
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| 700 |
1 |
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|a Lei, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Shuang
|e verfasserin
|4 aut
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| 700 |
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|a Yu, Fanghang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Changsheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cui, Jianhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Zeliang
|e verfasserin
|4 aut
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| 700 |
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|a Ma, Donghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Mengzhu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Honghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Wenxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Tao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ying, Jianjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Shiwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhenyu
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Xianhui
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 31 vom: 30. Aug., Seite e2008586
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:31
|g day:30
|g month:08
|g pages:e2008586
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|u http://dx.doi.org/10.1002/adma.202008586
|3 Volltext
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