Manipulating Ferromagnetism in Few-Layered Cr2 Ge2 Te6

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 31 vom: 30. Aug., Seite e2008586
1. Verfasser:	Zhuo, Weizhuang (VerfasserIn)
Weitere Verfasser:	Lei, Bin, Wu, Shuang, Yu, Fanghang, Zhu, Changsheng, Cui, Jianhua, Sun, Zeliang, Ma, Donghui, Shi, Mengzhu, Wang, Honghui, Wang, Wenxiang, Wu, Tao, Ying, Jianjun, Wu, Shiwei, Wang, Zhenyu, Chen, Xianhui
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2021
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Cr2Ge2Te6 electrical control of ferromagnetism field-effect transistors with solid ion conductor heterostuctures

Beschreibung
Zusammenfassung:	© 2021 Wiley-VCH GmbH. The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field-effect transistors with solid ion conductors as the gate dielectric (SIC-FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy-axis switching in few-layered Cr2 Ge2 Te6 . The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out-of-plane direction to an in-plane direction by electric field in the few-layered Cr2 Ge2 Te6 . Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few-layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC-FET device configuration, making further heterostructure-engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device
Beschreibung:	Date Revised 05.08.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202008586