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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202008761
|2 doi
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|a pubmed24n1080.xml
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|a (NLM)33876467
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|e rakwb
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|a eng
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|a Yan, Yong
|e verfasserin
|4 aut
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|a Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor
|b Gallium Thiophosphate
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.06.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4 by employing state-of-the-art GeS2 as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4 crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W-1 ), high detectivity (1.98 × 1012 Jones), and high quantum efficiency (2.39 × 103 %) in the solar-blind ultraviolet region. Moreover, the GaPS4 -based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors
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|a Journal Article
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|a 2D ultrawide bandgap semiconductors
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|a GaPS4
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|a in-plane anisotropy
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|a solar-blind photodetection
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| 700 |
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|a Yang, Juehan
|e verfasserin
|4 aut
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| 700 |
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|a Du, Juan
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Xiaomei
|e verfasserin
|4 aut
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|a Liu, Yue-Yang
|e verfasserin
|4 aut
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|a Xia, Congxin
|e verfasserin
|4 aut
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| 700 |
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|a Wei, Zhongming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 22 vom: 16. Juni, Seite e2008761
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:22
|g day:16
|g month:06
|g pages:e2008761
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|u http://dx.doi.org/10.1002/adma.202008761
|3 Volltext
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