Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor Gallium Thiophosphate

Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor : Gallium Thiophosphate

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 22 vom: 16. Juni, Seite e2008761
1. Verfasser: Yan, Yong (VerfasserIn)
Weitere Verfasser: Yang, Juehan, Du, Juan, Zhang, Xiaomei, Liu, Yue-Yang, Xia, Congxin, Wei, Zhongming
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D ultrawide bandgap semiconductors GaPS4 in-plane anisotropy solar-blind photodetection
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4 by employing state-of-the-art GeS2 as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4 crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W-1 ), high detectivity (1.98 × 1012 Jones), and high quantum efficiency (2.39 × 103 %) in the solar-blind ultraviolet region. Moreover, the GaPS4 -based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors
Beschreibung:Date Revised 01.06.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202008761