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|a 10.1002/adma.202007051
|2 doi
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|a pubmed24n1067.xml
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|a (DE-627)NLM320113019
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|a (NLM)33448081
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhang, Xiankun
|e verfasserin
|4 aut
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|a Hidden Vacancy Benefit in Monolayer 2D Semiconductors
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 17.02.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Monolayer 2D semiconductors (e.g., MoS2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS2 , an unusual mobility enhancement is obtained and a record-high carrier mobility (>115 cm2 V-1 s-1 ) is achieved, realizing monolayer MoS2 transistors with an exceptional current density (>0.60 mA µm-1 ) and a record-high on/off ratio >1010 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy-enhanced transport originates from a nearest-neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined
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|a Journal Article
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|a defect engineering
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|a electrical transport
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|a field-effect transistors
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|a monolayer MoS2
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|a sulfur vacancies
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|a Liao, Qingliang
|e verfasserin
|4 aut
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|a Kang, Zhuo
|e verfasserin
|4 aut
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|a Liu, Baishan
|e verfasserin
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|a Liu, Xiaozhi
|e verfasserin
|4 aut
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|a Ou, Yang
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|a Xiao, Jiankun
|e verfasserin
|4 aut
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|a Du, Junli
|e verfasserin
|4 aut
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|a Liu, Yihe
|e verfasserin
|4 aut
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|a Gao, Li
|e verfasserin
|4 aut
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|a Gu, Lin
|e verfasserin
|4 aut
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|a Hong, Mengyu
|e verfasserin
|4 aut
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|a Yu, Huihui
|e verfasserin
|4 aut
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|a Zhang, Zheng
|e verfasserin
|4 aut
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|a Duan, Xiangfeng
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Yue
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 7 vom: 01. Feb., Seite e2007051
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:7
|g day:01
|g month:02
|g pages:e2007051
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|u http://dx.doi.org/10.1002/adma.202007051
|3 Volltext
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