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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202005625
|2 doi
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|a pubmed24n1058.xml
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|a (NLM)33191506
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|a DE-627
|b ger
|c DE-627
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|a eng
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| 100 |
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|a Zhang, Zhuo-Zhi
|e verfasserin
|4 aut
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| 245 |
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|a A Suspended Silicon Single-Hole Transistor as an Extremely Scaled Gigahertz Nanoelectromechanical Beam Resonator
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 29.12.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Suspended single-hole transistors (SHTs) can also serve as nanoelectromechanical resonators, providing an ideal platform for investigating interactions between mechanical vibrations and charge carriers. Demonstrating such a device in silicon (Si) is of particular interest, due to the strong piezoresistive effect of Si and potential applications in Si-based quantum computation. Here, a suspended Si SHT also acting as a nanoelectromechanical beam resonator is demonstrated. The resonant frequency and zero-point motion of the device are ≈3 GHz and 0.2 pm, respectively, reaching the best level among similar devices demonstrated with Si-containing materials. The mechanical vibration is transduced to electrical readout by the SHT. The signal transduction mechanism is dominated by the piezoresistive effect. A giant apparent effective piezoresistive gauge factor with strong correlation to single-hole tunneling is extracted in this device. The results show the great potential of the device in interfacing charge carriers with mechanical vibrations, as well as investigating potential quantum behavior of the vibration phonon mode
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|a Journal Article
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4 |
|a CMOS compatibilities
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| 650 |
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4 |
|a nanoelectromechanical resonators
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| 650 |
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4 |
|a piezoresistive gauge factors
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| 650 |
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4 |
|a silicon
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4 |
|a single-hole transistors
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| 700 |
1 |
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|a Hu, Qitao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Xiang-Xiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ying, Yue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Hai-Ou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zhen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Guo-Ping
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 52 vom: 16. Dez., Seite e2005625
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:52
|g day:16
|g month:12
|g pages:e2005625
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202005625
|3 Volltext
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