Zhang, Z., Hu, Q., Song, X., Ying, Y., Li, H., Zhang, Z., & Guo, G. (2020). A Suspended Silicon Single-Hole Transistor as an Extremely Scaled Gigahertz Nanoelectromechanical Beam Resonator. Advanced materials (Deerfield Beach, Fla.), 32(52), . https://doi.org/10.1002/adma.202005625
Style de citation ChicagoZhang, Zhuo-Zhi, Qitao Hu, Xiang-Xiang Song, Yue Ying, Hai-Ou Li, Zhen Zhang, et Guo-Ping Guo. "A Suspended Silicon Single-Hole Transistor as an Extremely Scaled Gigahertz Nanoelectromechanical Beam Resonator." Advanced Materials (Deerfield Beach, Fla.) 32, no. 52 (2020). https://dx.doi.org/10.1002/adma.202005625.
Style de citation MLAZhang, Zhuo-Zhi, et al. "A Suspended Silicon Single-Hole Transistor as an Extremely Scaled Gigahertz Nanoelectromechanical Beam Resonator." Advanced Materials (Deerfield Beach, Fla.), vol. 32, no. 52, 2020.