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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202003276
|2 doi
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|a pubmed24n1048.xml
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|a (DE-627)NLM314486631
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|a (NLM)32875685
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kim, Kyung-Tae
|e verfasserin
|4 aut
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| 245 |
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|a Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 07.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol-gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.06 cm2 V-1 s-1 and a threshold voltage of -0.99 V with less than 9% variation, followed by 10 000 bending cycles with a radius of 125 μm. More importantly, the site-specific monolithic formation of mesa pillar-structured devices can provide fully integrated logic circuits such as seven-stage ring-oscillators, meeting the industrially needed device density and scalability. To exploit the underlying stress-diffusive mechanism, a physical model is provided by using a variety of chemical, structural, and electrical characterizations along with multidomain finite-element analysis simulation. The physical models reveal that a highly scalable and robust device can be achieved via the site-specific mesa architecture, by enabling generation of multineutral layers and fine-tuning the accumulated stresses on specific element of devices with their diffusion out into the boundary of the mesa regions
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|a Journal Article
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|a amorphous oxide thin-film transistors
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|a mesa-island structure
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| 650 |
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4 |
|a scalability
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| 650 |
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|a stress-diffusion
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| 650 |
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4 |
|a ultraflexibility
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| 700 |
1 |
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|a Moon, Sanghee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Minho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jo, Jeong-Wan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Chan-Yong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Seung-Han
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Yong-Hoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Sung Kyu
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 40 vom: 21. Okt., Seite e2003276
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:40
|g day:21
|g month:10
|g pages:e2003276
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|u http://dx.doi.org/10.1002/adma.202003276
|3 Volltext
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