Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation
© 2020 Wiley-VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 40 vom: 21. Okt., Seite e2003276 |
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| Weitere Verfasser: | , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2020
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article amorphous oxide thin-film transistors mesa-island structure scalability stress-diffusion ultraflexibility |
| Zusammenfassung: | © 2020 Wiley-VCH GmbH. The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol-gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.06 cm2 V-1 s-1 and a threshold voltage of -0.99 V with less than 9% variation, followed by 10 000 bending cycles with a radius of 125 μm. More importantly, the site-specific monolithic formation of mesa pillar-structured devices can provide fully integrated logic circuits such as seven-stage ring-oscillators, meeting the industrially needed device density and scalability. To exploit the underlying stress-diffusive mechanism, a physical model is provided by using a variety of chemical, structural, and electrical characterizations along with multidomain finite-element analysis simulation. The physical models reveal that a highly scalable and robust device can be achieved via the site-specific mesa architecture, by enabling generation of multineutral layers and fine-tuning the accumulated stresses on specific element of devices with their diffusion out into the boundary of the mesa regions |
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| Beschreibung: | Date Revised 07.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202003276 |