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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201908040
|2 doi
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|a pubmed24n1022.xml
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|a (DE-627)NLM306745607
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|a (NLM)32080924
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Huang, Wenhao
|e verfasserin
|4 aut
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| 245 |
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|a Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2 , hexagonal boron nitride (h-BN), and CuInP2 S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (107 ), ultralow programming state current (10-13 A), and long-time endurance (104 s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 × 105 ) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices
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|a Journal Article
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|a 2D ferroelectrics
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4 |
|a dual-gated coupling
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4 |
|a nonvolatile memory
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| 650 |
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4 |
|a programmable rectifiers
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| 650 |
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4 |
|a van der Waals heterostructures
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| 700 |
1 |
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|a Wang, Feng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Ruiqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sendeku, Marshet Getaye
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Junjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Ningning
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Yuyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 14 vom: 16. Apr., Seite e1908040
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:14
|g day:16
|g month:04
|g pages:e1908040
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|u http://dx.doi.org/10.1002/adma.201908040
|3 Volltext
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|a GBV_USEFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|d 32
|j 2020
|e 14
|b 16
|c 04
|h e1908040
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