Huang, W., Wang, F., Yin, L., Cheng, R., Wang, Z., Sendeku, M. G., . . . He, J. (2020). Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions. Advanced materials (Deerfield Beach, Fla.), 32(14), . https://doi.org/10.1002/adma.201908040
Style de citation ChicagoHuang, Wenhao, et al. "Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van Der Waals Ferroelectric Heterojunctions." Advanced Materials (Deerfield Beach, Fla.) 32, no. 14 (2020). https://dx.doi.org/10.1002/adma.201908040.
Style de citation MLAHuang, Wenhao, et al. "Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van Der Waals Ferroelectric Heterojunctions." Advanced Materials (Deerfield Beach, Fla.), vol. 32, no. 14, 2020.