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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201902962
|2 doi
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|a pubmed24n1007.xml
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|a (DE-627)NLM302249486
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|a (NLM)31618496
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|a DE-627
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|a eng
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|a Guo, Jian
|e verfasserin
|4 aut
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|a SnSe/MoS2 van der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 09.12.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The minimization of the subthreshold swing (SS) in transistors is essential for low-voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal-oxide-semiconductor field-effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec-1 at room temperature). However, another type of transistor, the junction field-effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure-based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p-n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well-behavioured n-channel JFET characteristics with a small pinch-off voltage VP of -0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec-1 and high ON/OFF ratio over 106 , demonstrating excellent electronic performance especially in the subthreshold regime
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|a Journal Article
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|a 2D semiconductors
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|a junction field-effect transistor
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|a subthreshold swing
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|a van der Waals heterostructures
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|a Wang, Laiyuan
|e verfasserin
|4 aut
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| 700 |
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|a Yu, Yiwei
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Peiqi
|e verfasserin
|4 aut
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|a Huang, Yu
|e verfasserin
|4 aut
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|a Duan, Xiangfeng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 49 vom: 13. Dez., Seite e1902962
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:49
|g day:13
|g month:12
|g pages:e1902962
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|u http://dx.doi.org/10.1002/adma.201902962
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