SnSe/MoS2 van der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 49 vom: 13. Dez., Seite e1902962
1. Verfasser: Guo, Jian (VerfasserIn)
Weitere Verfasser: Wang, Laiyuan, Yu, Yiwei, Wang, Peiqi, Huang, Yu, Duan, Xiangfeng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D semiconductors junction field-effect transistor subthreshold swing van der Waals heterostructures
Beschreibung
Zusammenfassung:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The minimization of the subthreshold swing (SS) in transistors is essential for low-voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal-oxide-semiconductor field-effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec-1 at room temperature). However, another type of transistor, the junction field-effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure-based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p-n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well-behavioured n-channel JFET characteristics with a small pinch-off voltage VP of -0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec-1 and high ON/OFF ratio over 106 , demonstrating excellent electronic performance especially in the subthreshold regime
Beschreibung:Date Completed 09.12.2019
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201902962