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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201902551
|2 doi
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|a pubmed24n0997.xml
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|a (NLM)31309623
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|a DE-627
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|e rakwb
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|a eng
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|a Sporea, Radu A
|e verfasserin
|4 aut
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|a Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Thin insulating layers are used to modulate a depletion region at the source of a thin-film transistor. Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al2 O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source-gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V-1 , and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2-50 µm channels and 2× for 9-45 µm source-gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky-contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact-controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometer control mature
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|a Journal Article
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|a IGZO
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|a amorphous oxide semiconductors
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|a source-gated transistors
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|a thin-film transistors
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|a tunnel barriers
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1 |
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|a Niang, Kham M
|e verfasserin
|4 aut
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1 |
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|a Flewitt, Andrew J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Silva, S Ravi P
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 36 vom: 16. Sept., Seite e1902551
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:36
|g day:16
|g month:09
|g pages:e1902551
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201902551
|3 Volltext
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