Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability
© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 36 vom: 16. Sept., Seite e1902551 |
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| Weitere Verfasser: | , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2019
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article IGZO amorphous oxide semiconductors source-gated transistors thin-film transistors tunnel barriers |
| Zusammenfassung: | © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Thin insulating layers are used to modulate a depletion region at the source of a thin-film transistor. Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al2 O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source-gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V-1 , and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2-50 µm channels and 2× for 9-45 µm source-gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky-contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact-controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometer control mature |
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| Beschreibung: | Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201902551 |