Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability
© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Détails bibliographiques
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 36 vom: 16. Sept., Seite e1902551
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| Auteur principal: |
Sporea, Radu A
(Auteur) |
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| Autres auteurs: |
Niang, Kham M,
Flewitt, Andrew J,
Silva, S Ravi P |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2019
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.)
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| Sujets: | Journal Article
IGZO
amorphous oxide semiconductors
source-gated transistors
thin-film transistors
tunnel barriers |
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