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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201807345
|2 doi
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|a pubmed24n0987.xml
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|a (DE-627)NLM296144495
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|a (NLM)30993771
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Chen, Zhaolong
|e verfasserin
|4 aut
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|a Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror-smooth single-crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as-fabricated DUV-LED shows a low turn-on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films
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|a Journal Article
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|a aluminum nitride
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|a chemical vapor deposition
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|a deep-ultraviolet light-emitting diodes
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|a graphene
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|a quasi-van der Waals epitaxy
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| 700 |
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|a Liu, Zhiqiang
|e verfasserin
|4 aut
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| 700 |
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|a Wei, Tongbo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Shenyuan
|e verfasserin
|4 aut
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1 |
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|a Dou, Zhipeng
|e verfasserin
|4 aut
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1 |
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|a Wang, Yunyu
|e verfasserin
|4 aut
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1 |
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|a Ci, Haina
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chang, Hongliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qi, Yue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Jianchang
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Junxi
|e verfasserin
|4 aut
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|a Zhang, Yanfeng
|e verfasserin
|4 aut
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1 |
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|a Gao, Peng
|e verfasserin
|4 aut
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|a Li, Jinmin
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 23 vom: 30. Juni, Seite e1807345
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:23
|g day:30
|g month:06
|g pages:e1807345
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|u http://dx.doi.org/10.1002/adma.201807345
|3 Volltext
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|d 31
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