Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 23 vom: 30. Juni, Seite e1807345
1. Verfasser: Chen, Zhaolong (VerfasserIn)
Weitere Verfasser: Liu, Zhiqiang, Wei, Tongbo, Yang, Shenyuan, Dou, Zhipeng, Wang, Yunyu, Ci, Haina, Chang, Hongliang, Qi, Yue, Yan, Jianchang, Wang, Junxi, Zhang, Yanfeng, Gao, Peng, Li, Jinmin, Liu, Zhongfan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article aluminum nitride chemical vapor deposition deep-ultraviolet light-emitting diodes graphene quasi-van der Waals epitaxy
Beschreibung
Zusammenfassung:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror-smooth single-crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as-fabricated DUV-LED shows a low turn-on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films
Beschreibung:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201807345