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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1107/S1600577519001504
|2 doi
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|a pubmed24n0982.xml
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|a (DE-627)NLM294789731
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|a (NLM)30855256
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Isomura, Noritake
|e verfasserin
|4 aut
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|a Distinguishing nitrogen-containing sites in SiO2/4H-SiC(0001) after nitric oxide annealing by X-ray absorption spectroscopy
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 13.03.2019
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|a Date Revised 13.03.2019
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The atomic structure of nitrogen at the SiO2/4H-SiC(0001) interface has been investigated using X-ray absorption spectroscopy (XAS) in two nitric oxide annealed samples, one of which was oxidized in dry O2 (NO-POA) prior to the experiment. The peak shapes and energies of the observed and simulated spectra are in agreement and indicate that the N-containing sites could be the substitutional C site at the interface for the NO-annealed sample and the interstitial site in the interior of SiC for the NO-POA-annealed sample. XAS analysis distinguished between the N-containing sites at the SiO2/SiC interface
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|a Journal Article
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|a SiC–MOS
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|a X-ray absorption fine structure
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| 650 |
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|a X-ray absorption spectroscopy
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|a XAFS
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|a XAS
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| 650 |
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|a interface structure
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1 |
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|a Kutsuki, Katsuhiro
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kataoka, Keita
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Watanabe, Yukihiko
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kimoto, Yasuji
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Journal of synchrotron radiation
|d 1994
|g 26(2019), Pt 2 vom: 01. März, Seite 462-466
|w (DE-627)NLM09824129X
|x 1600-5775
|7 nnns
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| 773 |
1 |
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|g volume:26
|g year:2019
|g number:Pt 2
|g day:01
|g month:03
|g pages:462-466
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|u http://dx.doi.org/10.1107/S1600577519001504
|3 Volltext
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|d 26
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|h 462-466
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