Distinguishing nitrogen-containing sites in SiO2/4H-SiC(0001) after nitric oxide annealing by X-ray absorption spectroscopy
The atomic structure of nitrogen at the SiO2/4H-SiC(0001) interface has been investigated using X-ray absorption spectroscopy (XAS) in two nitric oxide annealed samples, one of which was oxidized in dry O2 (NO-POA) prior to the experiment. The peak shapes and energies of the observed and simulated s...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 26(2019), Pt 2 vom: 01. März, Seite 462-466
|
|---|
| 1. Verfasser: |
Isomura, Noritake
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Kutsuki, Katsuhiro,
Kataoka, Keita,
Watanabe, Yukihiko,
Kimoto, Yasuji |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
2019
|
|---|
| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
|
|---|
| Schlagworte: | Journal Article
SiC–MOS
X-ray absorption fine structure
X-ray absorption spectroscopy
XAFS
XAS
interface structure |
|---|