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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.8b00679
|2 doi
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|a pubmed25n0942.xml
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|a (DE-627)NLM282641718
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|a (NLM)29614858
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Fetterly, Christopher R
|e verfasserin
|4 aut
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| 245 |
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|a Vapor-Phase Nanopatterning of Aminosilanes with Electron Beam Lithography
|b Understanding and Minimizing Background Functionalization
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.09.2018
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|a Date Revised 10.09.2018
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Electron beam lithography (EBL) is a highly precise, serial method for patterning surfaces. Positive tone EBL resists enable patterned exposure of the underlying surface, which can be subsequently functionalized for the application of interest. In the case of widely used native oxide-capped silicon surfaces, coupling an activated silane with electron beam lithography would enable nanoscale chemical patterning of the exposed regions. Aminoalkoxysilanes are extremely useful due to their reactive amino functionality but have seen little attention for nanopatterning silicon surfaces with an EBL resist due to background contamination. In this work, we investigated three commercial positive tone EBL resists, PMMA (950k and 495k) and ZEP520A (57k), as templates for vapor-phase patterning of two commonly used aminoalkoxysilanes, 3-aminopropyltrimethoxysilane (APTMS) and 3-aminopropyldiisopropylethoxysilane (APDIPES). The PMMA resists were susceptible to significant background reaction within unpatterned areas, a problem that was particularly acute with APTMS. On the other hand, with both APTMS and APDIPES exposure, unpatterned regions of silicon covered by the ZEP520A resist emerged pristine, as shown both with SEM images of the surfaces of the underlying silicon and through the lack of electrostatically driven binding of negatively charged gold nanoparticles. The ZEP520A resist allowed for the highly selective deposition of these alkoxyaminosilanes in the exposed areas, leaving the unpatterned areas clean, a claim also supported by contact angle measurements with four probe liquids and X-ray photoelectron spectroscopy (XPS). We investigated the mechanistic reasons for the stark contrast between the PMMA resists and ZEP520A, and it was found that the efficacy of resist removal appeared to be the critical factor in reducing the background functionalization. Differences in the molecular weight of the PMMA resists and the resulting influence on APTMS diffusion through the resist films are unlikely to have a significant impact. Area-selective nanopatterning of 15 nm gold nanoparticles using the ZEP520A resist was demonstrated, with no observable background conjugation noted in the unexposed areas on the silicon surface by SEM
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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1 |
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|a Olsen, Brian C
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luber, Erik J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Buriak, Jillian M
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1985
|g 34(2018), 16 vom: 24. Apr., Seite 4780-4792
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnas
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| 773 |
1 |
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|g volume:34
|g year:2018
|g number:16
|g day:24
|g month:04
|g pages:4780-4792
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|u http://dx.doi.org/10.1021/acs.langmuir.8b00679
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_22
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|a GBV_ILN_350
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| 912 |
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|a GBV_ILN_721
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| 951 |
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|a AR
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|d 34
|j 2018
|e 16
|b 24
|c 04
|h 4780-4792
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