Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition

High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid...

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Publié dans:Chemistry of materials : a publication of the American Chemical Society. - 1998. - 29(2017), 15 vom: 08. Aug., Seite 6279-6288
Auteur principal: Kalanyan, Berc (Auteur)
Autres auteurs: Kimes, William A, Beams, Ryan, Stranick, Stephan J, Garratt, Elias, Kalish, Irina, Davydov, Albert V, Kanjolia, Ravindra K, Maslar, James E
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Chemistry of materials : a publication of the American Chemical Society
Sujets:Journal Article CVD MOCVD MoS2 metalorganic chemistry transition metal dichalcogenides