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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1021/acs.chemmater.7b01367
|2 doi
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|a pubmed24n0940.xml
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|a (DE-627)NLM28201683X
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|a (NLM)29545674
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kalanyan, Berc
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.11.2019
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS2 films from ≈ 1 nm to ≈ 25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metalorganic reagents in the controlled synthesis of TMDs
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|a Journal Article
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|a CVD
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|a MOCVD
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|a MoS2
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|a metalorganic chemistry
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|a transition metal dichalcogenides
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|a Kimes, William A
|e verfasserin
|4 aut
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|a Beams, Ryan
|e verfasserin
|4 aut
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|a Stranick, Stephan J
|e verfasserin
|4 aut
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|a Garratt, Elias
|e verfasserin
|4 aut
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|a Kalish, Irina
|e verfasserin
|4 aut
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|a Davydov, Albert V
|e verfasserin
|4 aut
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|a Kanjolia, Ravindra K
|e verfasserin
|4 aut
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|a Maslar, James E
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Chemistry of materials : a publication of the American Chemical Society
|d 1998
|g 29(2017), 15 vom: 08. Aug., Seite 6279-6288
|w (DE-627)NLM098194763
|x 0897-4756
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:15
|g day:08
|g month:08
|g pages:6279-6288
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|u http://dx.doi.org/10.1021/acs.chemmater.7b01367
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
|
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_11
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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| 952 |
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|d 29
|j 2017
|e 15
|b 08
|c 08
|h 6279-6288
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