Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 29(2017), 15 vom: 08. Aug., Seite 6279-6288
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1. Verfasser: |
Kalanyan, Berc
(VerfasserIn) |
Weitere Verfasser: |
Kimes, William A,
Beams, Ryan,
Stranick, Stephan J,
Garratt, Elias,
Kalish, Irina,
Davydov, Albert V,
Kanjolia, Ravindra K,
Maslar, James E |
Format: | Online-Aufsatz
|
Sprache: | English |
Veröffentlicht: |
2017
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Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society
|
Schlagworte: | Journal Article
CVD
MOCVD
MoS2
metalorganic chemistry
transition metal dichalcogenides |