Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid...
| Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 29(2017), 15 vom: 08. Aug., Seite 6279-6288 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2017
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| Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society |
| Schlagworte: | Journal Article CVD MOCVD MoS2 metalorganic chemistry transition metal dichalcogenides |
| Zusammenfassung: | High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS2 films from ≈ 1 nm to ≈ 25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metalorganic reagents in the controlled synthesis of TMDs |
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| Beschreibung: | Date Revised 20.11.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 0897-4756 |
| DOI: | 10.1021/acs.chemmater.7b01367 |