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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201706771
|2 doi
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|a pubmed24n0937.xml
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|a eng
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|a Li, Liang
|e verfasserin
|4 aut
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|a 2D GeP
|b An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy
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|c 2018
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV-Group V compound 2D materials
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|a Journal Article
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|a 2D materials
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|a GeP
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|a in-plane anisotropy
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|a low-symmetry
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|a photodetectors
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1 |
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|a Wang, Weike
|e verfasserin
|4 aut
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1 |
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|a Gong, Penglai
|e verfasserin
|4 aut
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1 |
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|a Zhu, Xiangde
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Deng, Bei
|e verfasserin
|4 aut
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1 |
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|a Shi, Xingqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Guoying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Huiqiao
|e verfasserin
|4 aut
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| 700 |
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 14 vom: 28. Apr., Seite e1706771
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:30
|g year:2018
|g number:14
|g day:28
|g month:04
|g pages:e1706771
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|u http://dx.doi.org/10.1002/adma.201706771
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