2D GeP An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy

2D GeP : An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 14 vom: 28. Apr., Seite e1706771
1. Verfasser: Li, Liang (VerfasserIn)
Weitere Verfasser: Wang, Weike, Gong, Penglai, Zhu, Xiangde, Deng, Bei, Shi, Xingqiang, Gao, Guoying, Li, Huiqiao, Zhai, Tianyou
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials GeP in-plane anisotropy low-symmetry photodetectors
Beschreibung
Zusammenfassung:© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV-Group V compound 2D materials
Beschreibung:Date Completed 01.08.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201706771