In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride

Despite the success of plasma-enhanced atomic layer deposition (PEALD) in depositing quality silicon nitride films, a fundamental understanding of the growth mechanism has been difficult to obtain because of lack of in situ characterization to probe the surface reactions noninvasively and the comple...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 34(2018), 8 vom: 27. Feb., Seite 2619-2629
1. Verfasser: Peña, Luis Fabián (VerfasserIn)
Weitere Verfasser: Mattson, Eric C, Nanayakkara, Charith E, Oyekan, Kolade A, Mallikarjunan, Anupama, Chandra, Haripin, Xiao, Manchao, Lei, Xinjian, Pearlstein, Ronald M, Derecskei-Kovacs, Agnes, Chabal, Yves J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. Research Support, Non-U.S. Gov't