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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201703748
|2 doi
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|a pubmed25n0932.xml
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|a (DE-627)NLM279771967
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|a (NLM)29314276
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Li, Cheng
|e verfasserin
|4 aut
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| 245 |
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|a Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Black phosphorus (BP) has recently attracted significant attention due to its exceptional physical properties. Currently, high-quality few-layer and thin-film BP are produced primarily by mechanical exfoliation, limiting their potential in future applications. Here, the synthesis of highly crystalline thin-film BP on 5 mm sapphire substrates by conversion from red to black phosphorus at 700 °C and 1.5 GPa is demonstrated. The synthesized ≈50 nm thick BP thin films are polycrystalline with a crystal domain size ranging from 40 to 70 µm long, as indicated by Raman mapping and infrared extinction spectroscopy. At room temperature, field-effect mobility of the synthesized BP thin film is found to be around 160 cm2 V-1 s-1 along armchair direction and reaches up to about 200 cm2 V-1 s-1 at around 90 K. Moreover, red phosphorus (RP) covered by exfoliated hexagonal boron nitride (hBN) before conversion shows atomically sharp hBN/BP interface and perfectly layered BP after the conversion. This demonstration represents a critical step toward the future realization of large scale, high-quality BP devices and circuits
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|a Journal Article
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4 |
|a boron nitride/black phosphorus heterostructures
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4 |
|a phase transitions
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4 |
|a wafer-scale black phosphorus synthesis
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| 700 |
1 |
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|a Wu, Ye
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Deng, Bingchen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Yujun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Qiushi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yuan, Shaofan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Xiaolong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bhuiyan, Maruf
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Zishan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Watanabe, Kenji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Taniguchi, Takashi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hailiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cha, Judy J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Snure, Michael
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fei, Yingwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xia, Fengnian
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 6 vom: 15. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:6
|g day:15
|g month:02
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|u http://dx.doi.org/10.1002/adma.201703748
|3 Volltext
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