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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1107/S1600577517009857
|2 doi
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|a pubmed24n0917.xml
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|a (DE-627)NLM275348660
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|a (NLM)28862625
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Unuigbe, David M
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.11.2019
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO2) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2p XPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si2O), +2 (SiO) and +3 (Si2O3), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times
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|a Journal Article
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|a SEM
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|a XANES
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4 |
|a XPS
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|a charge transport
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|a native oxide
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| 650 |
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4 |
|a network structures
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|a printed layers
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| 650 |
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4 |
|a sub-oxide states
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| 700 |
1 |
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|a Harting, Margit
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jonah, Emmanuel O
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Britton, David T
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nordlund, Dennis
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Journal of synchrotron radiation
|d 1994
|g 24(2017), Pt 5 vom: 01. Sept., Seite 1017-1023
|w (DE-627)NLM09824129X
|x 1600-5775
|7 nnns
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| 773 |
1 |
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|g volume:24
|g year:2017
|g number:Pt 5
|g day:01
|g month:09
|g pages:1017-1023
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| 856 |
4 |
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|u http://dx.doi.org/10.1107/S1600577517009857
|3 Volltext
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|h 1017-1023
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