Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...
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Détails bibliographiques
| Publié dans: | Journal of synchrotron radiation. - 1994. - 24(2017), Pt 5 vom: 01. Sept., Seite 981-990
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| Auteur principal: |
Davtyan, Arman
(Auteur) |
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| Autres auteurs: |
Lehmann, Sebastian,
Kriegner, Dominik,
Zamani, Reza R,
Dick, Kimberly A,
Bahrami, Danial,
Al-Hassan, Ali,
Leake, Steven J,
Pietsch, Ullrich,
Holý, Václav |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2017
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| Accès à la collection: | Journal of synchrotron radiation
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| Sujets: | Journal Article
Patterson function
coherent nanobeam X-ray diffraction
nanowire
stacking faults |
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