Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 24(2017), Pt 5 vom: 01. Sept., Seite 981-990
|
|---|
| 1. Verfasser: |
Davtyan, Arman
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Lehmann, Sebastian,
Kriegner, Dominik,
Zamani, Reza R,
Dick, Kimberly A,
Bahrami, Danial,
Al-Hassan, Ali,
Leake, Steven J,
Pietsch, Ullrich,
Holý, Václav |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
2017
|
|---|
| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
|
|---|
| Schlagworte: | Journal Article
Patterson function
coherent nanobeam X-ray diffraction
nanowire
stacking faults |
|---|