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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700439
|2 doi
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|a pubmed24n0910.xml
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|a (DE-627)NLM273174029
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|a (NLM)28639401
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Fu, Lei
|e verfasserin
|4 aut
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|a Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS2 back-gate field-effect transistors display a competitive mobility of 7.6 cm2 V-1 s-1 and an ultrahigh on/off ratio exceeding 108 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 105 A W-1 , which is 109 -fold higher than 9 × 10-5 A W-1 obtained from the multilayer MoS2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 105 and an ultrahigh detectivity exceeding 4.01 × 1012 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications
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|a Journal Article
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|a hafnium disulfide crystals
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|a near-infrared
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|a transition metal dichalcogenides
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|a ultrasensitive phototransistors
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|a van der Waals epitaxy
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|a Wang, Feng
|e verfasserin
|4 aut
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1 |
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|a Wu, Bin
|e verfasserin
|4 aut
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1 |
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|a Wu, Nian
|e verfasserin
|4 aut
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1 |
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|a Huang, Wei
|e verfasserin
|4 aut
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|a Wang, Hanlin
|e verfasserin
|4 aut
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|a Jin, Chuanhong
|e verfasserin
|4 aut
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|a Zhuang, Lin
|e verfasserin
|4 aut
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| 700 |
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|a He, Jun
|e verfasserin
|4 aut
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1 |
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|a Fu, Lei
|e verfasserin
|4 aut
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|a Liu, Yunqi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 32 vom: 21. Aug.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:32
|g day:21
|g month:08
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|u http://dx.doi.org/10.1002/adma.201700439
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|d 29
|j 2017
|e 32
|b 21
|c 08
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