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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605092
|2 doi
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|a eng
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|a Berhane, Amanuel M
|e verfasserin
|4 aut
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|a Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
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|c 2017
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|a Text
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|a ƒaComputermedien
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies
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|a gallium nitride wafer
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|a narrow linewidth
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|a point defects
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|a single-photon sources
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|a Jeong, Kwang-Yong
|e verfasserin
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|a Bodrog, Zoltán
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|a Fiedler, Saskia
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|a Schröder, Tim
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|a Triviño, Noelia Vico
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|a Palacios, Tomás
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